Magnetoresistive device having semiconductor substrate and preparation method therefor
US9130142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2012 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Apr 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
The present invention relates to a magnetoresistance device using a semiconductor substrate and a method for manufacturing the same. The magnetoresistance device includes: a semiconductor substrate; an oxidation layer disposed on a surface of the semiconductor substrate; electrodes disposed on the oxidation layer; and at least one diode connected between at least two of the electrodes. The magnetoresistance device of the present invention has excellent performances of a high field magnetoresistance characteristic and high sensitivity at low magnetic field, and has advantages of low power consumption, simple device structure, low cost and simple manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.