Patent · US Active

Optoelectronic component and method for the production thereof

US9130189B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Tilman Schlenker · Nittendorf, DE
Ralph Paetzold · Roth, DE

Key dates

Filing date	Jan 10, 2014
Grant date	Sep 8, 2015
Priority date	—
Expiry date	Jan 10, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An optoelectronic component having a substrate (1), an anode (2) and a cathode (10) and at least one active layer (6) disposed between the anode and the cathode. An amorphous dielectric layer (3) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.