Patent · US Active

Multi-step pattern formation

US9132510B2 · kind B2 · utility

20Cited by
21References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 2, 2012
Grant dateSep 15, 2015
Priority date
Expiry dateSep 24, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49996
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

One embodiment includes a method for creating a recessed pattern in a substrate. The method includes laser ablating the substrate to form a recessed complex edge geometry in the substrate. The recessed complex edge geometry forms at least a portion of the pattern. The method also includes machining a remainder of the pattern with a mechanical cutter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.