Patent · US Active

n-Type doped organic materials and methods therefor

US9133130B2 · kind B2 · utility

2Cited by

0References

30Claims

0Family size

Assignee

The Board of Trustees of the Leland Stanford Junior University · US

Inventors

Peng Wei · Nanhu, CN
Zhenan Bao · Lyndhurst, US

Key dates

Filing date	Apr 5, 2011
Grant date	Sep 15, 2015
Priority date	—
Expiry date	Jan 14, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldOrganic fine chemistry
WIPO sectorChemistry

Abstract

In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.