Garnet material, method for its manufacturing and radiation-emitting component comprising the garnet material

US9133392B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Madis Raukas · Boston, US
• Karl Krister Bergenek · Regensburg, DE
• George C. Wei · Oak Ridge, US
• Nathan Michael Zink · Salem, US
• Stefan Lange · Shepperton, GB

Key dates

• Filing date: Jul 22, 2010
• Grant date: Sep 15, 2015
• Expiry date: Nov 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/48247
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0≦x≦2.