High crystalline quality synthetic diamond
US9133566B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2006 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Mar 16, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterized by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterized by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1×10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.