Resistive device comprising a silicon-nanowire-comprising strain gauge and method for optimizing the electrical consumption of such a device
US9134191B2 · kind B2 · utility
2Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Jun 29, 2012 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y35/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A resistive device which includes at least one strain gauge (12, 14) comprising silicon nanowires, a power supply (16) that has at least one current source (22, 24) able to generate a current (Ibias) for biasing the strain gauge; and acquisition means (18) able to deliver a measurement signal which can be used to determine the variation in the electrical resistance of the gauge is provided. The power supply includes a chopper (26) allowing the biasing current generated by each current source to flow through each gauge only during a fraction of an operating cycle of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.