Photomask for exposure and method of manufacturing pattern using the same
US9134603B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 4, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.