Temperature based logic profile for variable resistance memory cells
US9135993B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Inventors
Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device may generally be constructed and operated with at least one variable resistance memory cell having a first logic state threshold that is replaced with a second logic state threshold by a controller. The first and second logic states respectively corresponding to a predicted resistance shift that is based upon an operating temperature profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.