Field effect transistors with gate electrodes having Ni and Ti metal layers
US9136111B1 · kind B1 · utility
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16Claims
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Key dates
| Filing date | Jun 29, 2012 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor and method for making such a transistor is provided, the field effect transistor comprising: a gate layer stack comprising a layer of a first metal is disposed proximate to at least one layer of a second metal, wherein the first metal alloys with the second metal to form a shape memory alloy. The shape metal allow may be NiTi, and at the contact plane between the layers, the alloy is formed when the transistor is heated to an elevated temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.