Semiconductor device
US9136263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jan 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/815
Abstract
Provided is a semiconductor device which uses a comb-like N-type MOS transistor as an ESD protection element and is capable of uniformly operating the entire comb-like N-type MOS transistor. By adjusting a length L of a gate electrode of the N-type MOS transistor used as the ESD protection element in accordance with the distance from a contact for fixing a substrate potential, which is provided on a guard ring around an outer periphery, respective portion of N-type MOS transistor represented as a comb teeth uniformly enter snap-back operation, permitting avoidance of local concentration of current and obtainment of a desired ESD tolerance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.