Semiconductor device and semiconductor memory device including capacitor
US9136268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Apr 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device includes: a second transistor having a second conductive type formed on a first well region having a first conductive type; a first transistor having a first conductive type formed on a second well region having a second conductive type; a first well guard ring having the first conductive type, the first well guard ring including at least a first portion formed between the first transistor and the second transistor; a second well guard ring having the first conductive type, the second well guard ring including at least a first portion formed between the first transistor and the second transistor; and a first capacitor formed on at least one of the first well region and the second well region, and located between the first portion of the first well guard ring and the first portion of the second well guard ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.