Thin film transistor and manufacturing method thereof
US9136342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Sep 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6736
Abstract
A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.