Nitride semiconductor device

US9136347B2 · kind B2 · utility

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Young Rak PARK · Daejeon, KR
• Sang Choon Ko · Daejeon, KR
• Woojin Chang · Daejeon, KR
• Jae Kyoung Mun · Daejeon, KR
• Sung-Bum Bae · Daejeon, KR

Key dates

• Filing date: Jun 23, 2014
• Grant date: Sep 15, 2015
• Expiry date: Jun 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

Provided is a nitride semiconductor device including: a substrate having through via holes; first and second nitride semiconductor layers sequentially stacked on the substrate; drain electrodes and source electrodes provided on the second nitride semiconductor layer; and an insulating pattern provided on the second nitride semiconductor layer, the insulating pattern having upper via holes provided on the drain electrodes, wherein the through via holes are extended into the first and second nitride semiconductor layers and expose a bottom of each of the source electrodes.