Method of fabricating P-type surface-channel LDMOS device with improved in-plane uniformity
US9136374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Mar 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
A method of fabricating a P-type surface-channel laterally diffused metal oxide semiconductor device includes forming a gate structure with polysilicon and metal silicide, and the processes of channel implantation, long-time high-temperature drive-in, formation of a heavily doped N-type polysilicon sinker and boron doping of a polysilicon gate, are performed in this order, thereby ensuring the gate not to be doped with boron during its formation. The high-temperature drive-in process is allowed to be carried out to form a channel with a desired width, and a short channel effect which may cause penetration or electric leakage of the resulting device is prevented. As the polysilicon gate is not processed by any high-temperature drive-in process after it is doped with boron, the penetration of boron through a gate oxide layer and the diffusion of N-type impurity contained in the heavily doped polysilicon sinker into the channel or other regions are prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.