Semiconductor device
US9136400B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | May 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.