Photoconductive device
US9136419B2 · kind B2 · utility
0Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Dec 7, 2005 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1248
Abstract
A semiconductor structure includes a GaAs or InP substrate, an InxGa1-xAs epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the InxGa1-xAs epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.