Semiconductor light emitting element and light emitting device

US9136425B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Jumpei Tajima · Mitaka, JP
• Shigeya Kimura · Yokohama, JP
• Hiroshi Ono · Setagaya, JP
• Naoharu Sugiyama · Yokohama, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Jul 22, 2014
• Grant date: Sep 15, 2015
• Expiry date: Jul 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8582

Abstract

A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately. The stacked body is aligned with the first substrate. The stacked body includes first and second semiconductor layers and a light emitting layer. The electrode is electrically connected to the first semiconductor layer. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face.