Patent · US Active

Multilayer construction

US9136429B2 · kind B2 · utility

0Cited by
7References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 25, 2014
Grant dateSep 15, 2015
Priority date—
Expiry dateAug 25, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/347
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Multilayer construction is disclosed. The multilayer construction includes a II-VI semiconductor layer and a Si3N4 layer disposed directly on the II-VI semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.