Light emitting diode

US9136433B2 · kind B2 · utility

Assignee

• GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Seong Ju Park · Gwangju, KR
• Jae-Joon Kim · Old Tappan, US
• Youngchul LEEM · Gwangju, KR

Key dates

• Filing date: Sep 30, 2014
• Grant date: Sep 15, 2015
• Expiry date: Sep 30, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855

Abstract

Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.