Optoelectronic device and the manufacturing method thereof
US9136436B2 · kind B2 · utility
2Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Sep 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.