Phase change memories

US9136469B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Ying Li · Shanghai, CN
• Neil Zhu · Shanghai, CN
• Guanping Wu · Hubei, CN

Key dates

• Filing date: Mar 9, 2015
• Grant date: Sep 15, 2015
• Expiry date: Mar 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method is provided for fabricating a phase change memory. The method includes providing a semiconductor substrate having a bottom electrode connecting with one or more semiconductor devices, and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a loop-shape electrode in the first dielectric layer, and forming a second dielectric layer having a first opening exposing a portion of the first dielectric layer and a portion of the loop-shape electrode. Further, the method includes forming a phase change layer in the first opening of the second dielectric layer such that a contact area between the phase change layer and the loop-shape electrode may be controlled to achieve desired contact, and forming a top electrode.