Backside illumination image sensor, operating method thereof, image processing system and method of processing image using the same
US9137432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A backside illumination image sensor is provided. The backside illumination image sensor includes a plurality of different types of pixels, each pixel including a photodiode configured to accumulate photogenerated charges corresponding to light incident on a backside of a semiconductor substrate and a transfer transistor configured to transfer the photogenerated charges to a floating diffusion node; and a plurality of transfer lines disposed at a front side of the semiconductor substrate, the plurality of transfer lines connected to a gate of the transfer transistor of a respective one of the pixels, wherein transfer control signals respectively transmitted through the transfer lines produce different effective integration times in the pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.