Patent · US Active

Method of encapsulating a microelectronic device

US9139424B2 · kind B2 · utility

7Cited by
0References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 25, 2013
Grant dateSep 22, 2015
Priority date
Expiry dateJul 25, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of encapsulating at least one microelectronic device is provided, including encapsulating the device in a cavity hermetically sealed against air, a cap of the cavity including at least one wall permeable to at least one noble gas; injecting the noble gas into the cavity through the wall permeable to the noble gas; hermetically sealing the cavity against air and the injected noble gas; forming the device on at least one first substrate; bonding at least one second substrate to the first substrate, thereby forming the cavity hermetically sealed against air, the wall permeable to the noble gas being formed by part of the second substrate; and forming, between the encapsulating and the injecting, at least one portion of material impermeable to the noble gas such that said portion partially covers the part of the second substrate that forms the wall permeable to the noble gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.