Patent · US Active

ISFET switch

US9140663B2 · kind B2 · utility

2Cited by

0References

24Claims

0Family size

Assignee

DNA Electronics, Inc. · GB

Inventors

Christofer Toumazou · London, GB
Abdulrahman Al-Ahdal · London, GB

Key dates

Filing date	Oct 10, 2011
Grant date	Sep 22, 2015
Priority date	—
Expiry date	Mar 6, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T436/143333
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

There is provided a semiconductor device for detecting a change in ion concentration of a sample and method of using same. The device can have a plurality of Field Effect Transistors (FETs) coupled to a common floating gate and an ion sensing layer exposed to the sample and coupled to the floating gate. There may be other input voltages coupled to the floating gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.