Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device
US9140742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2013 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/265
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.