Temperature compensating magneto-resistive sensor for measuring magnetic fields
US9140766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Aug 31, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/09
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magneto-resistive sensor for measuring a magnetic field based on an anisotropic magneto-resistive (AMR) effect or a gigantic magneto-resistive (GMR) effect comprises a substrate and a plurality of resistors that include first magneto-resistive layer strips arranged in form of a bridge circuit on the substrate. The plurality of resistors have a resistance value that depends on a magnetic field strength. At least one second layer strip is connected in series with the first magneto-resistive layer strips of at least one of the plurality of resistors. The first magneto-resistive layer strips have a resistance that depends on temperature according to a first positive temperature coefficient; and the at least one second layer strip has a resistance that depends on temperature according to a second temperature coefficient different from the first temperature coefficient, the second temperature coefficient being non-negative.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.