Patent · US Active

Temperature compensating magneto-resistive sensor for measuring magnetic fields

US9140766B2 · kind B2 · utility

0Cited by
4References
19Claims
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Key dates

Filing dateJun 25, 2012
Grant dateSep 22, 2015
Priority date
Expiry dateAug 31, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/09
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magneto-resistive sensor for measuring a magnetic field based on an anisotropic magneto-resistive (AMR) effect or a gigantic magneto-resistive (GMR) effect comprises a substrate and a plurality of resistors that include first magneto-resistive layer strips arranged in form of a bridge circuit on the substrate. The plurality of resistors have a resistance value that depends on a magnetic field strength. At least one second layer strip is connected in series with the first magneto-resistive layer strips of at least one of the plurality of resistors. The first magneto-resistive layer strips have a resistance that depends on temperature according to a first positive temperature coefficient; and the at least one second layer strip has a resistance that depends on temperature according to a second temperature coefficient different from the first temperature coefficient, the second temperature coefficient being non-negative.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.