Monolayer type photoconductor and image forming device
US9141007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Nov 19, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0677
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a monolayer type photoconductor superior in sensitivity characteristics that allows reliable production by easy confirmation of the sensitivity characteristics, and an image forming device using such a monolayer type photoconductor. A monolayer type photoconductor including a base body and a single photo sensitive layer formed on the base body, the single photo sensitive layer containing a charge generating agent, a hole transfer agent, an electron transfer agent and a binding resin, wherein a maximum absorption wavelength (λmax) of the photo sensitive layer is set to a value of below 850 nm and an absorbance (A850) of light at a wavelength of 850 nm per unit thickness of the photo sensitive layer is set to a value of 0.05 μm−1 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.