Semiconductor devices and fabrication methods thereof
US9142446B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate; and a body region and a drift region formed in the semiconductor substrate. The semiconductor device also includes a bulk region and a source region formed in the body region. Further, the semiconductor device includes a drain region and a first shallow trench isolation structure having a ladder-like bottom formed in the drift region. Further, the semiconductor device also includes a gate structure spanning over an edge of the body region and an edge of the drift region formed on the semiconductor substrate and covering a portion of the first shallow trench isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.