Semiconductor array having temperature-compensated breakdown voltage

US9142552B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Alfred Goerlach · Tübingen, DE
• Ning Qu · Beijing, CN

Key dates

• Filing date: Oct 2, 2014
• Grant date: Sep 22, 2015
• Expiry date: Oct 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/121

Abstract

A semiconductor array is described whose breakdown voltage has only a very low temperature coefficient or none at all and therefore there is little or no temperature-dependent voltage rise. The voltage limitation is achieved by a punch-through effect.