Image sensor device and manufacturing method thereof
US9142590B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80373
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a transfer gate transistor of an image sensor device is disclosed. The transistor includes a substrate, a gate oxide layer on the substrate and a gate electrode portion on the gate oxide layer. The gate electrode portion has a trench or an insulating layer used for accurately defining a first region and a second region in the gate electrode portion, wherein the first region has a first conductivity type, and the second region has a second conductivity type or is an undoped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.