Light emitting device, method of manufacturing light emitting device, and electronic equipment

US9142599B2 · kind B2 · utility

Assignee

• SEIKO EPSON CORPORATION · JP

Inventors

• Takeshi Koshihara · Matsumoto, JP
• Ryoichi Nozawa · Tatsuno, JP

Key dates

• Filing date: Aug 8, 2014
• Grant date: Sep 22, 2015
• Expiry date: Aug 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/341

Abstract

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.