Phase control thyristor with improved pattern of local emitter shorts dots
US9142656B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/291
Abstract
A phase control thyristor includes a main gate structure and a plurality of local emitter shorts dots arranged in a shorts pattern on a cathode side of the thyristor. The main gate structure includes longitudinal main gate beams extending from a center region of the cathode side towards a circumferential region. Neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line. The shorts pattern is more homogeneous in a region closer to a main gate beam than in a region closer to an associated middle line. Adaptions to match shorts patterns in neighboring segments of the cathode side surface are made in regions away from the main gate beams such that an electron hole plasma spreading from the main gate beam is not interfered by any inhomogeneity of the shorts dots pattern. The design rules enable an improvement of the thyristor operational characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.