Gated thyristor power device
US9142657B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Mar 15, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/4291
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved gated thyristor that utilizes less silicon area than IGBT, BIPOLARs or MOSFETs sized for the same application is provided. Embodiments of the inventive thyristor have a lower gate charge, and a lower forward drop for a given current density. Embodiments of the thyristor once triggered have a latch structure that does not have the same Cgd or Ccb capacitor that must be charged from the gate, and therefore the gated thyristor is cheaper to produce, and requires a smaller gate driver, and takes up less space than standard solutions. Embodiments of the inventive thyristor provide a faster turn off speed than the typical >600 ns using a modified MCT structure which results in the improved tail current turn off profile (<250 ns). Additionally, series resistance of the device is reduced without comprising voltage blocking ability is achieved. Finally, a positive only gate drive means is taught as is a method to module the saturation current using the gate terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.