Semiconductor diode device
US9142687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.