Semiconductor drift detector and corresponding operating method

US9142702B2 · kind B2 · utility

Assignees

• PNDetector GmbH · DE
• PNSensor GmbH · DE

Inventors

• Gerhard Lutz · Munich, DE
• Heike Soltau · Birkenfeld, DE
• Adrian Niculae · Drolshagen, DE

Key dates

• Filing date: Jun 18, 2012
• Grant date: Sep 22, 2015
• Expiry date: Sep 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/2448
• WIPO field: Environmental technology
• WIPO sector: Chemistry

Abstract

The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (⊖), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (⊖), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS). The invention provides for the semiconductor drift detector to be optionally operable in a first operating mode or in a second operating mode, wherein the semiconductor drift detector in the first operating mode measures the photon energy of the incident photons (h·f), whereas the semiconductor drift detector in the second operating mode measures the signal charge carrier current. Furthermore, the invention encompasses a corresponding operating method.