Optoelectronic element and manufacturing method thereof
US9142740B2 · kind B2 · utility
1Cited by
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14Claims
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Key dates
| Filing date | May 2, 2013 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | May 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8585
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.