Patent · US Active

Electrical device having magnetically doped topological insulator quantum well film

US9142760B2 · kind B2 · utility

0Cited by

0References

10Claims

0Family size

Assignees

TSINGHUA UNIVERSITY · CN
INSTITUTE OF PHYSICS, THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Qi Xue · Nanjing, CN
Ke He · Beijing, CN
Xu-Cun Ma · Beijing, CN
Xi Chen · Sunnyvale, US
Li Wang
Cui-Zu Chang · Beijing, CN
Xiao Feng · Beijing, CN
Yao-Yi Li · Beijing, CN
Jin-Feng Jia · Beijing, CN

Key dates

Filing date	Oct 16, 2013
Grant date	Sep 22, 2015
Priority date	—
Expiry date	Oct 16, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/265
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1. The magnetically doped TI quantum well film is in 3 QL to 5 QL.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.