On-chip power-combining for high-power schottky diode based frequency multipliers
US9143084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Jun 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.