Single-level cell and multi-level cell hybrid solid state drive
US9146851B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 2012 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Apr 24, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7205
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A solid state drive (SSD) having a first memory portion comprising SLC flash memory and a second memory portion comprising MLC flash memory. The first memory portion may store read/write data, and the second memory portion may store read-only or read-mostly data. In some instances, the second memory portion may store historical data. The present disclosure also relates to a method of data progression in a hybrid solid state drive having both single-level cell (SLC) flash memory and multi-level cell (MLC) flash memory. The method may include monitoring write operations to the SLC memory, determining whether the frequency of write operations to a particular portion of the SLC memory is below a determined threshold, and moving the data stored in the particular portion of the SLC memory to the MLC memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.