Method for calculating parameter values of thin-film transistor and apparatus for performing the method
US9147022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2012 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.