Magnetic random access memory
US9147458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2013 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic random access memory includes a write circuit to write complementary data to first and second magnetoresistive elements, and a read circuit to read the complementary data from the first and second magnetoresistive elements. The control circuit is configured to change the first and second bit lines to a floating state after setting the first and second bit lines to a first potential, and change a potential of the first bit line in the floating state to a first value in accordance with a resistance value of the first magnetoresistive element and a potential of the second bit line in the floating state to a second value in accordance with a resistance value of the second magnetoresistive element by setting the common source line to a second potential higher than the first potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.