Semiconductor device and fabrication method
US9147737B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2013 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments provide semiconductor devices including high-K dielectric layer(s) and fabrication methods. An exemplary high-K dielectric layer can be formed by providing a semiconductor substrate including a first region and a second region, and forming a first silicon oxide layer on the semiconductor substrate in the first region. The semiconductor substrate can then be placed in an atomic layer deposition (ALD) chamber to repeatedly perform a selective ALD process. The selective ALD process can include an etching process and/or a purging process in the ALD chamber. By repeatedly performing the selective ALD process, a first high-K dielectric layer can be selectively formed on the first silicon oxide layer in the first region, exposing the semiconductor substrate in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.