Fast photoconductor

US9147789B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Bernd Sartorius · Berlin, DE
• Harald Kuenzel · Berlin, DE
• Helmut Roehle · Berlin, DE

Key dates

• Filing date: Jan 27, 2012
• Grant date: Sep 29, 2015
• Expiry date: Jan 27, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photoconductor comprising a layer stack with a semiconductor layer photoconductive for a predetermined wavelength range between two semiconductor boundary layers with a larger band gap than the photoconductive semiconductor layer on a substrate, wherein the semiconductor boundary layers comprise deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer, and two electrodes connected to the photoconductive semiconductor layer, for lateral current flow between the electrodes through the photoconductive semiconductor layer.