Heavily doped PbSe with high thermoelectric performance
US9147822B2 · kind B2 · utility
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Key dates
| Filing date | Oct 26, 2011 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jul 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/129
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when nH˜1.0×1020 cm−3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.