Light-emitting diode and deposition apparatus for fabricating the same
US9150954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Oct 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/80518
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a light-emitting diode including: a first electrode including a reflective metal layer and a transparent conductive material layer formed on the reflective metal layer; an emitting material layer formed on the first electrode and including a light-emitting layer formed with a host and first and second dopants; and a second electrode formed on the emitting material layer and being a semi-transparent electrode, wherein a first wavelength corresponding to a peak value of a photo luminescence (PL) spectrum of the first dopant is shorter than a second wavelength corresponding to a peak value of an electro luminescence (EL) spectrum of the first dopant, and a third wavelength corresponding to a peak value of a PL spectrum of the second dopant is longer than a fourth wavelength corresponding to a peak value of an EL spectrum of the second dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.