Apparatus and method of forming a sputtering target
US9150958B1 · kind B1 · utility
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19References
15Claims
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Key dates
| Filing date | Jan 23, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2998/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method and apparatus for forming a sputtering target are provided that includes a copper indium gallium sputtering target material on a backing structure. The sputtering target is formed by compressing pre-alloyed and atomized powders of Cu, In, and Ga at pressures below 35,000 psi. In some embodiments the sputtering target material contains Na, S, or Se. In other embodiments the sputtering target is formed by isothermal compression.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.