Crystal sensor made by ion implantation for sensing a property of interest within a borehole in the earth
US9151153B2 · kind B2 · utility
1Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N29/2437
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a method for producing a crystal sensor. The method includes selecting a crystal configured to sense a property of interest. The method further includes implanting ions in the crystal using ion-implantation to produce a conductive region within the crystal where the conductive region is capable of providing a signal to sense the property of interest. Also disclosed is a method and apparatus for estimating a property of interest using the crystal sensor in a borehole penetrating the earth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.