In situ substrate detection for a processing system using infrared detection
US9151597B2 · kind B2 · utility
1Cited by
12References
27Claims
0Family size
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Key dates
| Filing date | Feb 11, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Infrared detection is used to monitor the temperature within a vapor transport deposition processing chamber. Changes in temperature that occur when a substrate passes an infrared detector are detected and used to precisely locate a position of the substrate within the chamber. Position correction of the substrate can also be implemented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.