Method for manufacturing semiconductor device
US9153436B2 · kind B2 · utility
34Cited by
25References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.